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  "title": "Measuring the permittivity of Fused Silica with planar on-wafer structures up to 325 GHz",
  "contactPoint": {
    "fn": "Florian Bergmann",
    "hasEmail": "mailto:florian.bergmann@nist.gov"
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  "modified": "2023-06-29",
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  "description": [
    "Fused silica has become an interesting alternative to silicon for millimeter-wave (mmWave) applications. \nUnfortunately, there are few reports on the measurement of fused silica\u2019s permittivity above 110 GHz that \nuse electrical rather than optical methods. Given that mmWave applications use electrical circuits, \nadditional electrical data would be useful to industry. To test the feasibility of electrical methods, \nwe applied on-wafer techniques based on coplanar waveguide transmission lines to measure the complex \npermittivity of fused silica to 325 GHz. Our approach used the multiline thru reflect line algorithm on \nthe scattering parameter measurements of transmission lines. Our method combined these results with \ndc measurements of the resistivity of the metals, simulations of the coplanar waveguide cross section, \nand dimensional metrology. The resulting complex permittivity was epsilon_r = 3.87\u00b10.03 and a loss tangent \ntan_delta < 0.005 from 320 MHz to 325 GHz. To support our conclusions, we performed an uncertainty analysis \nconsidering relevant sources of uncertainty. In the broader context, these results show that fused silica \nis a suitable substrate for mmWave electronics where the loss tangent must be less than 0.005 up to 325 GHz."
  ],
  "keyword": [
    "Microwave",
    "mmWave",
    "Wafer",
    "Coplanar Waveguide",
    "Permittivity",
    "Fused Silica"
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    "Metrology: Electrical/electromagnetic metrology"
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