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Geometries and material properties for simulating semiconductor patterned bridge defects using the finite-difference time-domain (FDTD) method

Part of the CHIPS METIS Data Collection
Contact: Bryan Barnes.
Identifier: doi:10.18434/T4/1500937
Version: 1.0...
An in-house developed finite-difference time-domain (FDTD) code has been used to simulate certain patterned defects as found in the semiconductor industry. Intrinsic to FDTD is the establishment of a simulation domain, a 3-D matrix of some arbitrary size (X, Y, Z) comprised of smaller cells (in our case, cubic with side length x), with each cell indexed to a material (including the vacuum) to form the geometry. Although the specific text files used as inputs to the in-house FDTD engine are provided, such files are likely incompatible with external FDTD solutions for the replication of our results. Therefore, entire 3-D matrices for our simulations have been reduced to single-vector, readable ASCII data files indexing the geometry and materials of the system, accompanied by text files that supply the optical constants used in the simulation as well as cross-sectional images that allow verification by others of their reconstruction of the 3-D matrix from the supplied 1-D ASCII data files.
Research Areas
CHIPS Metrology: Metrology: Computational Technique: SimulationMicroelectronics: Electronic DeviceMaterials Research: Semiconductor: SiMaterials Research: Dielectric and Insulator: SiO2Materials Research: Dielectric and Insulator: HfO2Show more...
Keywords: finite-difference time-domainFDTDelectromagnetic simulationpattered defect inspectiondefectsShow more...
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Version: 1.0...
This dataset is part of the CHIPS METIS Data Collection.
Cite this dataset
Bryan Barnes (2018), Geometries and material properties for simulating semiconductor patterned bridge defects using the finite-difference time-domain (FDTD) method, National Institute of Standards and Technology, https://doi.org/10.18434/T4/1500937 (Accessed 2025-06-17)
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